페이지 인쇄
IRF9389TRPBF
Dual MOSFET, Complementary N and P Channel, 30 V, 30 V, 6.8 A, 6.8 A, 0.022 ohm
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제품 정보
제조업체INFINEON
제조업체 부품 번호IRF9389TRPBF
주문 코드2579952RL
Product RangeHEXFET Series
AKASP001551666
기술 데이터 시트
Channel TypeComplementary N and P Channel
Transistor PolarityComplementary N and P Channel
Drain Source Voltage Vds N Channel30V
Drain Source Voltage Vds30V
Drain Source Voltage Vds P Channel30V
Continuous Drain Current Id6.8A
Continuous Drain Current Id N Channel6.8A
On Resistance Rds(on)0.022ohm
Continuous Drain Current Id P Channel6.8A
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.022ohm
Rds(on) Test Voltage10V
Drain Source On State Resistance P Channel0.022ohm
Transistor Case StyleSOIC
Gate Source Threshold Voltage Max1.8V
No. of Pins8Pins
Power Dissipation Pd2W
Power Dissipation N Channel2W
Power Dissipation P Channel2W
Operating Temperature Max150°C
Product RangeHEXFET Series
Qualification-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
제품 개요
HEXFET® power MOSFET suitable for use in high and low sides switches for inverter, high and low side switches for generic half bridge.
- High-side P-channel MOSFET
- Industry-standard pinout
- Compatible with existing surface mount technique
- Increased power density
- Easier drive circuitry
- Multi-vendor compatibility
- Easier manufacturing
- Environmentally friendlier
- Increased reliability
경고
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
기술 사양
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds N Channel
30V
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id N Channel
6.8A
Continuous Drain Current Id P Channel
6.8A
Drain Source On State Resistance N Channel
0.022ohm
Drain Source On State Resistance P Channel
0.022ohm
Gate Source Threshold Voltage Max
1.8V
Power Dissipation Pd
2W
Power Dissipation P Channel
2W
Product Range
HEXFET Series
Automotive Qualification Standard
-
SVHC
No SVHC (21-Jan-2025)
Transistor Polarity
Complementary N and P Channel
Drain Source Voltage Vds
30V
Continuous Drain Current Id
6.8A
On Resistance Rds(on)
0.022ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Transistor Case Style
SOIC
No. of Pins
8Pins
Power Dissipation N Channel
2W
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
IRF9389TRPBF의 대체 제품
1개 제품을 찾았습니다.
관련 제품
4개 제품을 찾았습니다.
법률 및 환경
원산지:
최종후의 중요 제조 공정이 이루어진 국가원산지:China
최종후의 중요 제조 공정이 이루어진 국가
최종후의 중요 제조 공정이 이루어진 국가원산지:China
최종후의 중요 제조 공정이 이루어진 국가
관세 번호:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS 준수:예
RoHS
RoHS 프탈레이트 준수:예
RoHS
SVHC:No SVHC (21-Jan-2025)
제품 준수 증명서 다운로드
제품 준수 증명서
무게(kg):.0001