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IRFH4253DTRPBF
Dual MOSFET, N Channel + Schottky, 25 V, 145 A, 0.0011 ohm
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제조업체INFINEON
제조업체 부품 번호IRFH4253DTRPBF
주문 코드2577150
Product RangeFastIRFET HEXFET Series
AKASP001556246
기술 데이터 시트
제품 정보
제조업체INFINEON
제조업체 부품 번호IRFH4253DTRPBF
주문 코드2577150
Product RangeFastIRFET HEXFET Series
AKASP001556246
기술 데이터 시트
Channel TypeN Channel + Schottky
Drain Source Voltage Vds N Channel25V
Drain Source Voltage Vds P Channel-
Continuous Drain Current Id N Channel145A
Continuous Drain Current Id P Channel-
Drain Source On State Resistance N Channel0.0011ohm
Drain Source On State Resistance P Channel-
Transistor Case StyleQFN
No. of Pins10Pins
Power Dissipation N Channel50W
Power Dissipation P Channel-
Operating Temperature Max150°C
Product RangeFastIRFET HEXFET Series
Qualification-
제품 개요
IRFH4253DTRPBF is a HEXFET® Power MOSFET. Application includes control and synchronous MOSFETs for synchronous buck converters.
- Control and synchronous MOSFETs in one package, increased power density
- Low charge control MOSFET (10nC typical), lower switching losses
- Low RDSON synchronous MOSFET (<lt/>1.45mohm), lower conduction losses
- Intrinsic schottky diode with low forward voltage on Q2, lower switching losses
- Environmentally friendlier, industrial qualification, increased reliability
- Drain-to-source breakdown voltage is 25V (typ, Q1, Q2, VGS = 0V, ID = 250µA/1.0mA)
- Breakdown voltage temp coefficient is 22mV/°C (typ, Q1, Q2, reference to 25°C, ID = 1.0mA)
- Gate threshold voltage is 1.6V (typ, Q1: VDS = VGS, ID = 35µA, Q2: VDS = VGS, ID = 100µA)
- Drain-to-source leakage current is 1.0µA (typ, VDS = 20V, VGS = 0V, TJ = 25°C)
- Dual PQFN package, operating junction and storage temperature range from -55 to + 150°C
기술 사양
Channel Type
N Channel + Schottky
Drain Source Voltage Vds P Channel
-
Continuous Drain Current Id P Channel
-
Drain Source On State Resistance P Channel
-
No. of Pins
10Pins
Power Dissipation P Channel
-
Product Range
FastIRFET HEXFET Series
Drain Source Voltage Vds N Channel
25V
Continuous Drain Current Id N Channel
145A
Drain Source On State Resistance N Channel
0.0011ohm
Transistor Case Style
QFN
Power Dissipation N Channel
50W
Operating Temperature Max
150°C
Qualification
-
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법률 및 환경
원산지:
최종후의 중요 제조 공정이 이루어진 국가원산지:China
최종후의 중요 제조 공정이 이루어진 국가
최종후의 중요 제조 공정이 이루어진 국가원산지:China
최종후의 중요 제조 공정이 이루어진 국가
관세 번호:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS 준수:예
RoHS
RoHS 프탈레이트 준수:예
RoHS
제품 준수 증명서 다운로드
제품 준수 증명서
무게(kg):.0001