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제품 정보
제조업체INFINEON
제조업체 부품 번호IRFS3004TRL7PP
주문 코드2725977RL
Product RangeHEXFET
AKASP001557236
기술 데이터 시트
Channel TypeN Channel
Drain Source Voltage Vds40V
Continuous Drain Current Id240A
Drain Source On State Resistance1250µohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation380W
No. of Pins7Pins
Operating Temperature Max150°C
Product RangeHEXFET
Qualification-
SVHCNo SVHC (21-Jan-2025)
제품 개요
Single N-channel HEXFET® power MOSFET suitable for use in high efficiency synchronous rectification in SMPS, uninterruptible power supply, high speed power switching, hard switched and high frequency circuits applications.
- Improved gate, avalanche and dynamic dV/dt ruggedness
- Fully characterized capacitance and avalanche SOA
- Enhanced body diode dV/dt and dI/dt Capability
- Optimized for broadest availability from distribution partners
- Product qualification according to JEDEC standard
- Normal level: optimized for 10V gate drive voltage
- Industry standard surface-mount power package
- High-current carrying capability package (up to 240A, die-size dependent)
경고
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
기술 사양
Channel Type
N Channel
Continuous Drain Current Id
240A
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Power Dissipation
380W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
40V
Drain Source On State Resistance
1250µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
No. of Pins
7Pins
Product Range
HEXFET
MSL
MSL 1 - Unlimited
기술 문서 (1)
IRFS3004TRL7PP의 대체 제품
3개 제품을 찾았습니다.
법률 및 환경
원산지:
최종후의 중요 제조 공정이 이루어진 국가원산지:Mexico
최종후의 중요 제조 공정이 이루어진 국가
최종후의 중요 제조 공정이 이루어진 국가원산지:Mexico
최종후의 중요 제조 공정이 이루어진 국가
관세 번호:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS 준수:예
RoHS
RoHS 프탈레이트 준수:예
RoHS
SVHC:No SVHC (21-Jan-2025)
제품 준수 증명서 다운로드
제품 준수 증명서
무게(kg):.001