IRS21531DSTRPBF
MOSFET Driver, Half Bridge, 10.1 V to 15.4 V supply, 260 mA out, 350 ns delay, SOIC-8

2,500 지금 제품을 예약하실 수 있습니다
| 포장 유형 | 수량 | 단가: | 총계 |
|---|---|---|---|
| 컷 테이프 | 1 | ₩2,097 | ₩2,097 |
| 총계 가격 | ₩2,097 | ||
| 수량 | 가격 |
|---|---|
| 1+ | ₩2,097 |
| 10+ | ₩1,386 |
| 50+ | ₩1,308 |
| 100+ | ₩1,230 |
| 250+ | ₩1,154 |
| 500+ | ₩1,108 |
| 1000+ | ₩1,078 |
| 2500+ | ₩1,052 |
제품 정보
제품 개요
IRS21531DSTRPBF is a self oscillating half-bridge gate driver IC using a more advanced silicon platform, and incorporates a high voltage half-bridge gate driver with a front end oscillator similar to the industry standard CMOS 555 timer. HVIC and latch immune CMOS technologies enable rugged monolithic construction. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. Noise immunity is achieved with low di/dt peak of the gate drivers.
- Integrated 600V half-bridge gate driver
- CT, RT programmable oscillator
- 15.4V Zener clamp on VCC, +/- 50V/ns dV/dt immunity
- Micropower startup, non-latched shutdown on CT pin (1/6th VCC)
- Internal bootstrap FET, excellent latch immunity on all inputs and outputs
- ESD protection on all pins, internal deadtime
- Quiescent VBS supply current is 60µA typical
- Oscillator frequency is 93KHz typical at RT=7.15Kohm
- 8-lead SOIC package
- Junction temperature range from -40 to 125°C
경고
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
기술 사양
2Channels
Half Bridge
8Pins
Surface Mount
180mA
10.1V
-40°C
680ns
-
MSL 2 - 1 year
Non-Isolated
MOSFET
SOIC
-
260mA
16.8V
125°C
150ns
-
No SVHC (25-Jun-2025)
기술 문서 (1)
법률 및 환경
최종후의 중요 제조 공정이 이루어진 국가원산지:Malaysia
최종후의 중요 제조 공정이 이루어진 국가
RoHS
RoHS
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