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| 수량 | 가격 |
|---|---|
| 1+ | ₩4,124 |
| 10+ | ₩3,841 |
| 25+ | ₩3,826 |
| 50+ | ₩3,810 |
| 100+ | ₩3,794 |
| 250+ | ₩3,778 |
| 500+ | ₩3,762 |
| 1000+ | ₩3,746 |
제품 정보
제품 개요
S25FS256SAGNFI001 is a FS-S flash non-volatile memory using MIRRORBIT™ technology - that stores two data bits in each memory array transistor, eclipse architecture - that dramatically improves program and erase performance, 65-nm process lithography. The S25FS-S family connects to a host system via a serial peripheral interface (SPI). This multiple width interface is called SPI multi-I/O or MIO. In addition, this is double data rate (DDR) read commands for QIO and QPI that transfer address and read data on both edges of the clock. The FS-S Eclipse architecture features a page programming buffer that allows up to 512bytes to be programmed in one operation, resulting in faster effective programming and erase than prior generation SPI program or erase algorithms.
- 256Mbit density, 65nm MIRRORBIT™ Process Technology, 133MHz SDR speed
- 8-contact WSON 6 × 8mm / WSON 6 × 5mm package type, industrial temperature range from -40 to + 85°C
- SOIC16 / WSON 6 × 8mm footprint
- SPI clock polarity and phase modes 0 and 3
- Normal, fast, dual I/O, quad I/O, DDR quad I/O, modes burst wrap, continuous (XIP), QPI
- Serial flash discoverable parameters and common flash interface for configuration information
- 256 or 512byte page programming buffer, program suspend and resume
- Automatic ECC internal hardware error correction code generation with single-bit error correction
- Erase suspend and resume, erase status evaluation, one-time program (OTP) array of 1024bytes
- 100000 program-erase cycles, minimum, 20 year data retention, minimum
기술 사양
Serial NOR
256Mbit
32M x 8bit
SPI
WSON
133MHz
-
2V
Surface Mount
85°C
No SVHC (21-Jan-2025)
256Mbit
32M x 8bit
SPI
WSON
8Pins
133MHz
1.7V
1.8V
-40°C
1.8V Serial NOR Flash Memories
기술 문서 (1)
법률 및 환경
최종후의 중요 제조 공정이 이루어진 국가원산지:Malaysia
최종후의 중요 제조 공정이 이루어진 국가
RoHS
RoHS
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