AT28HC64BF-12SU

The AT28HC64BF-12SU is a 64k high-performance Electrically Erasable and Programmable Read-Only Memory (EEPROM) organized as 8192 words by 8-bit. Manufactured with advanced non-volatile CMOS technology, the device offers access times to 120ns with power dissipation of just 220mW. When the device is deselected, the CMOS standby current is less than 100µA. The AT28HC64BF is accessed like a static RAM for the read or write cycle without the need for external components. The device contains a 64-byte page register to allow writing of up to 64-byte simultaneously. During a write cycle, the addresses and 1 to 64-byte of data are internally latched, freeing the address and data bus for other operations. Following the initiation of a write cycle, the device will automatically write the latched data using an internal control timer. The end of a write cycle can be detected by DATA polling of I/O7. Once the end of a write cycle has been detected, a new access for a read or write can begin.

• Automatic page write operation
• Fast write cycle times
• Low power dissipation
• Hardware and software data protection
• Data polling for end of write detection
• High reliability CMOS technology
• Endurance - 100000 cycles
• Data retention - 10 years
• CMOS and TTL Compatible inputs and outputs
• JEDEC Approved byte-wide pinout
• Green product and no Sb/Br