MT29F128G08AJAAAWP-ITZ:A

MT29F128G08AJAAAWP-ITZ:A is an asynchronous NAND flash memory. It includes an asynchronous data interface for high-performance I/O operations. This device uses a highly multiplexed 8-bit bus (DQx) to transfer commands, address, and data. There are five control signals used to implement the asynchronous data interface: CE#, CLE, ALE, WE#, and RE#. Additional signals control hardware write protection (WP#) and monitor device status (R/B#). This Micron NAND Flash device additionally includes a synchronous data interface for high-performance I/O operations. When the synchronous interface is active, WE# becomes CLK and RE# becomes W/R#. Data transfers include a bidirectional data strobe (DQS). This hardware interface creates a low pin-count device with a standard pinout that remains the same from one density to another, enabling future upgrades to higher densities with no board redesign.

• 128Gb density, 8bits device width, 1bit cell level
• 4 die, 2 # of CE#, 2 of R/B#, common I/O
• Operating voltage range from VCC is 3.3V (2.7 to 3.6V), VCCQ is 3.3V (2.7t o 3.6V)
• Polyimide process applied
• Up to asynchronous timing mode 5, tRC/tWC is 20ns (MIN), read/write throughput per pin 50MT/s
• Read page is 35µs (max), program page is 350µs (typ), erase block is 1.5ms (typ)
• Command set: ONFI NAND flash protocol, advanced command set
• Program cache, read cache sequential, read cache random
• Copyback operations supported within the plane from which data is read
• 48-pin TSOP package, industrial operating temperature range from -40°C to +85°C

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