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수량 | 가격 |
---|---|
1+ | ₩5,380 |
10+ | ₩4,682 |
25+ | ₩4,621 |
50+ | ₩4,559 |
100+ | ₩4,497 |
250+ | ₩4,355 |
500+ | ₩4,313 |
1000+ | ₩4,270 |
제품 정보
제품 개요
MT29F2G16ABAGAWP is a NAND flash memory. This NAND flash device include an asynchronous data interface for high-performance I/O operations. This device use a highly multiplexed 8-bit bus (I/Ox) to transfer commands, address, and data. There are five control signals used to implement the asynchronous data interface: CE#, CLE, ALE, WE# and RE#. This hardware interface creates a low pin-count device with a standard pinout that remains the same from one density to another, enabling future upgrades to higher densities with no board redesign. A target is the unit of memory accessed by a chip enable signal. A target contains one or more NAND flash die. A NAND flash die is the minimum unit that can independently execute commands and report status. A NAND flash die, in the ONFI specification, is referred to as a logical unit (LUN). There is at least one NAND Flash die per chip enable signal.
- Single-level cell (SLC) technology, asynchronous I/O performance, array performance
- Erase block is 2ms (typical), command set is ONFI NAND flash protocol
- Advanced command set, one-time programmable (OTP) mode, internal ECC disabled by default (parallel)
- Operation status byte provides software method for detecting, operation completion
- RESET (FFh) required as first command after power-on, quality and reliability
- Alternate method of device initialization after power-up (contact factory)
- Internal data move operations supported within the plane from which data is read
- 2Gb density, 16bit device width, SLC level
- 3.3V (2.7–3.6V) operating voltage, asynchronous interface
- 48-pin TSOP Type 1, CPL package, automotive operating temperature range from -40°C to 105°C
기술 사양
SLC NAND
128M x 16bit
TSOP-I
50MHz
-
3.3V
-40°C
3.3V Parallel NAND Flash Memories
2Gbit
Parallel
48Pins
-
-
Surface Mount
105°C
법률 및 환경
최종후의 중요 제조 공정이 이루어진 국가원산지:Taiwan
최종후의 중요 제조 공정이 이루어진 국가
RoHS
RoHS
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