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수량 | 가격 |
---|---|
1+ | ₩17,820 |
10+ | ₩16,531 |
25+ | ₩16,017 |
50+ | ₩15,754 |
100+ | ₩15,623 |
제품 정보
제품 개요
MT29F8G08 is a NAND flash memory. NAND flash device include an asynchronous data interface for high-performance I/O operations. This device use a highly multiplexed 8-bit bus (I/Ox) to transfer commands, address, and data. There are five control signals used to implement the asynchronous data interface: CE#, CLE, ALE, WE#, and RE#. Additional signals control hardware write protection and monitor device status (R/B#). This hardware interface creates a low pin-count device with a standard pinout that remains the same from one density to another, enabling future upgrades to higher densities with no board redesign. A target is the unit of memory accessed by a chip enable signal. A target contains one or more NAND Flash die. A NAND flash die is the minimum unit that can independently execute commands and report status. A NAND flash die, in the ONFI specification, is referred to as a logical unit (LUN). There is at least one NAND Flash die per chip enable signal.
- Single-level cell (SLC) technology, asynchronous I/O performance
- Array performance, read page is 45µs (typical)
- Command set is ONFI NAND flash protocol, read unique ID
- Operation status byte provides software method for detecting, operation completion
- First block (block address 00h) is valid when shipped from factory
- Alternate method of device initialization (Nand-Init) after power up (contact factory)
- Internal data move operations supported within the plane from which data is read
- 8Gb density, 8bit device width, SLC level
- 3.3V (2.7–3.6V) operating voltage, asynchronous interface
- 63-ball VFBGA (9 x 11 x1.0mm) package, automotive operating temperature range from –40°C to +105°C
기술 사양
SLC NAND
1G x 8bit
VFBGA
50MHz
2.7V
3.3V
-40°C
3.3V Parallel NAND Flash Memories
8Gbit
Parallel
63Pins
16ns
3.6V
Surface Mount
105°C
법률 및 환경
최종후의 중요 제조 공정이 이루어진 국가원산지:Taiwan
최종후의 중요 제조 공정이 이루어진 국가
RoHS
RoHS
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