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| 수량 | 가격 |
|---|---|
| 1+ | ₩5,708 |
| 10+ | ₩5,292 |
| 25+ | ₩5,139 |
| 50+ | ₩4,958 |
| 100+ | ₩4,736 |
| 250+ | ₩4,653 |
| 500+ | ₩4,514 |
| 1000+ | ₩4,472 |
제품 정보
제품 개요
MT47H64M8SH-25E:H is a DDR2 SDRAM. It uses a double data rate architecture to achieve high-speed operation. The double data rate architecture is essentially a 4n-prefetch architecture, with an interface designed to transfer two data words per clock cycle at the I/O balls. A single READ or WRITE operation for the DDR2 SDRAM effectively consists of a single 4n-bitwide, two-clock-cycle data transfer at the internal DRAM core and four corresponding n-bit-wide, one-half-clock-cycle data transfers at the I/O balls. A bidirectional data strobe (DQS, DQS#) is transmitted externally, along with data, for use in data capture at the receiver. DQS is a strobe transmitted by the DDR2 SDRAM during READs and by the memory controller during WRITEs. DQS is edge-aligned with data for READs and centre-aligned with data for WRITEs.
- 64M8 configuration, tCK = 2.5ns, CL = 5 cycle time
- VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V
- JEDEC-standard 1.8V I/O (SSTL_18-compatible), differential data strobe (DQS, DQS#) option
- 4n-bit prefetch architecture, duplicate output strobe (RDQS) option for x8
- DLL to align DQ and DQS transitions with CK, 4 internal banks for concurrent operation
- Programmable CAS latency (CL), posted CAS additive latency (AL)
- Adjustable data-output drive strength, on-die termination (ODT)
- Package style is 60-ball FBGA
기술 사양
DDR2
64M x 8bit
TFBGA
1.8V
0°C
-
512Mbit
400MHz
60Pins
Surface Mount
85°C
기술 문서 (1)
법률 및 환경
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