제품 정보
제품 개요
The FQA19N60 is a 600V N-channel QFET® enhancement mode Power MOSFET is produced using planar stripe and DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance and withstand high energy pulse in the avalanche and commutation mode. This device is well suited for high efficient switched mode power supplies, active power factor correction and electronic lamp ballast based on half bridge topology. This product is general usage and suitable for many different applications.
- Low gate charge
- 100% avalanche tested
경고
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
기술 사양
N Channel
18.5A
TO-3P
10V
300W
150°C
-
Lead (08-Jul-2021)
600V
0.38ohm
Through Hole
5V
3Pins
-
-
법률 및 환경
최종후의 중요 제조 공정이 이루어진 국가원산지:China
최종후의 중요 제조 공정이 이루어진 국가
RoHS
RoHS
제품 준수 증명서