NTBG020N090SC1

NTBG020N090SC1 is an EliteSiC silicon carbide (SiC) MOSFET that uses a completely new technology that provide superior switching performance and higher reliability compared to silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size. Applications include DC-DC converter, boost inverter, UPS.

• Low RDSon, ultra low gate charge (Qg tot), low output capacitance (Coss)
• 100% UIL tested
• Drain to source breakdown voltage is 900V min at VGS = 0V, ID = 1mA, TJ = 25°C
• Zero gate voltage drain current is 100µA max at VGS = 0V, TJ = 25°C
• Gate threshold voltage is 2.6V typ at VGS = VDS, ID = 20mA, TJ = 25°C
• Drain to source on resistance is 20mohm typ at VGS = 15V, ID = 60A, TJ = 25°C
• Total gate charge is 200nC typ at VGS = -5/15V, VDS = 720V, ID = 60A, TJ = 25°C
• 52ns rise time/13ns fall time at VGS = -5/15V, VDS = 720V, ID = 60A, RG = 2.5ohm, inductive load
• Operating junction and storage temperature range from -55 to +175°C
• D2PAK-7L package