제품 정보
제품 개요
The RFD16N05LSM9A is a N-channel logic level Power MOSFET manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits give optimum utilization of silicon, resulting in outstanding performance. It is designed for use with logic level (5V) driving sources in applications such as programmable controllers, switching regulators, switching converters and emitter switches for bipolar transistors. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate biases in the 3 to 5V range, thereby facilitating true on-off power control directly from logic circuit supply voltages. Formerly developmental type TA09871.
- UIS SOA rating curve (single pulse)
- Can be driven directly from CMOS, NMOS and TTL circuits
- SOA is power dissipation limited
- Nanosecond switching speeds
- Linear transfer characteristics
- High input impedance
- Majority carrier device
애플리케이션
Power Management, Motor Drive & Control, Industrial
경고
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
기술 사양
N Channel
16A
TO-252AA
5V
60W
150°C
-
50V
0.047ohm
Surface Mount
2V
3Pins
-
Lead (27-Jun-2024)
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법률 및 환경
최종후의 중요 제조 공정이 이루어진 국가원산지:China
최종후의 중요 제조 공정이 이루어진 국가
RoHS
RoHS
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