BSS123

The BSS123 is a 100V N-channel logic level enhancement mode Field Effect Transistor produced using high cell density, DMOS technology. This device has been designed to minimize on-state resistance while providing rugged, reliable and fast switching performance. It is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers and other switching applications. This product is general usage and suitable for many different applications.

• High density cell design for extremely low RDS (ON)
• Rugged and reliable
• ±20V continuous gate source voltage (VGSS)
• 350°C/W thermal resistance, junction to ambient

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Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.