페이지 인쇄
EFC8811R-TF
Dual MOSFET, N Channel, 12 V, 12 V, 27 A, 27 A
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제품 정보
제조업체ONSEMI
제조업체 부품 번호EFC8811R-TF
주문 코드2706277RL
기술 데이터 시트
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds N Channel12V
Drain Source Voltage Vds12V
Drain Source Voltage Vds P Channel12V
Continuous Drain Current Id27A
On Resistance Rds(on)0.0023ohm
Continuous Drain Current Id N Channel27A
Continuous Drain Current Id P Channel27A
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel-
Rds(on) Test Voltage4.5V
Drain Source On State Resistance P Channel-
Transistor Case StyleCSP
Gate Source Threshold Voltage Max1.3V
No. of Pins6Pins
Power Dissipation Pd2.5W
Power Dissipation N Channel2.5W
Power Dissipation P Channel2.5W
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
MSL-
SVHCNo SVHC (14-Jun-2023)
제품 개요
경고
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
기술 사양
Channel Type
N Channel
Drain Source Voltage Vds N Channel
12V
Drain Source Voltage Vds P Channel
12V
On Resistance Rds(on)
0.0023ohm
Continuous Drain Current Id P Channel
27A
Drain Source On State Resistance N Channel
-
Drain Source On State Resistance P Channel
-
Gate Source Threshold Voltage Max
1.3V
Power Dissipation Pd
2.5W
Power Dissipation P Channel
2.5W
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (14-Jun-2023)
Transistor Polarity
N Channel
Drain Source Voltage Vds
12V
Continuous Drain Current Id
27A
Continuous Drain Current Id N Channel
27A
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
4.5V
Transistor Case Style
CSP
No. of Pins
6Pins
Power Dissipation N Channel
2.5W
Operating Temperature Max
150°C
Qualification
-
MSL
-
법률 및 환경
원산지:
최종후의 중요 제조 공정이 이루어진 국가원산지:China
최종후의 중요 제조 공정이 이루어진 국가
최종후의 중요 제조 공정이 이루어진 국가원산지:China
최종후의 중요 제조 공정이 이루어진 국가
관세 번호:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS 준수:예
RoHS
RoHS 프탈레이트 준수:예
RoHS
SVHC:No SVHC (14-Jun-2023)
제품 준수 증명서 다운로드
제품 준수 증명서
무게(kg):.00001