페이지 인쇄
FDC6321C
Dual MOSFET, N and P Channel, 25 V, 25 V, 680 mA, 460 mA, 0.45 ohm
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제품 정보
제조업체ONSEMI
제조업체 부품 번호FDC6321C
주문 코드9844848RL
기술 데이터 시트
Transistor PolarityComplementary N and P Channel
Channel TypeN and P Channel
Drain Source Voltage Vds25V
Drain Source Voltage Vds N Channel25V
Continuous Drain Current Id460mA
Drain Source Voltage Vds P Channel25V
On Resistance Rds(on)0.33ohm
Continuous Drain Current Id N Channel680mA
Continuous Drain Current Id P Channel460mA
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.45ohm
Rds(on) Test Voltage4.5V
Drain Source On State Resistance P Channel1.1ohm
Transistor Case StyleSuperSOT
Gate Source Threshold Voltage Max800mV
No. of Pins6Pins
Power Dissipation Pd900mW
Power Dissipation N Channel900mW
Power Dissipation P Channel900mW
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCNo SVHC (27-Jun-2024)
제품 개요
The FDC6321C is a dual N/P-channel Digital FET with high cell density and DMOS technology. This very high density process is especially tailored to minimize ON-state resistance. The device is an improved design especially for low voltage applications as a replacement for bipolar digital transistors in load switching applications. Since bias resistors are not required, this dual digital FET can replace several digital transistors with difference bias resistors.
- Very low level gate drive requirements allowing direct operation in 3V circuits
- Gate-source Zener for ESD ruggedness
애플리케이션
Industrial, Power Management
기술 사양
Transistor Polarity
Complementary N and P Channel
Drain Source Voltage Vds
25V
Continuous Drain Current Id
460mA
On Resistance Rds(on)
0.33ohm
Continuous Drain Current Id P Channel
460mA
Drain Source On State Resistance N Channel
0.45ohm
Drain Source On State Resistance P Channel
1.1ohm
Gate Source Threshold Voltage Max
800mV
Power Dissipation Pd
900mW
Power Dissipation P Channel
900mW
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (27-Jun-2024)
Channel Type
N and P Channel
Drain Source Voltage Vds N Channel
25V
Drain Source Voltage Vds P Channel
25V
Continuous Drain Current Id N Channel
680mA
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
4.5V
Transistor Case Style
SuperSOT
No. of Pins
6Pins
Power Dissipation N Channel
900mW
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
FDC6321C의 대체 제품
1개 제품을 찾았습니다.
관련 제품
2개 제품을 찾았습니다.
법률 및 환경
원산지:
최종후의 중요 제조 공정이 이루어진 국가원산지:Philippines
최종후의 중요 제조 공정이 이루어진 국가
최종후의 중요 제조 공정이 이루어진 국가원산지:Philippines
최종후의 중요 제조 공정이 이루어진 국가
관세 번호:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS 준수:예
RoHS
RoHS 프탈레이트 준수:예
RoHS
SVHC:No SVHC (27-Jun-2024)
제품 준수 증명서 다운로드
제품 준수 증명서
무게(kg):.000113