페이지 인쇄
FDS8935
Dual MOSFET, P Channel, 80 V, 80 V, 2.1 A, 2.1 A, 0.148 ohm
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제품 정보
제조업체ONSEMI
제조업체 부품 번호FDS8935
주문 코드2083351RL
기술 데이터 시트
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds80V
Drain Source Voltage Vds N Channel80V
Drain Source Voltage Vds P Channel80V
Continuous Drain Current Id2.1A
On Resistance Rds(on)0.148ohm
Continuous Drain Current Id N Channel2.1A
Continuous Drain Current Id P Channel2.1A
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.148ohm
Rds(on) Test Voltage10V
Drain Source On State Resistance P Channel0.148ohm
Gate Source Threshold Voltage Max1.8V
Transistor Case StyleSOIC
Power Dissipation Pd3.1W
No. of Pins8Pins
Power Dissipation N Channel3.1W
Power Dissipation P Channel3.1W
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
SVHCNo SVHC (17-Jan-2022)
제품 개요
The FDS8935 is a dual P-channel MOSFET produced using advanced PowerTrench® process. It is optimized for RDS (ON), switching performance and ruggedness. The device is suitable for use with load switch and synchronous rectifier applications.
- High performance Trench technology for extremely low RDS (ON)
- High power and current handling capability in a widely used surface-mount package
- ±20V Gate to source voltage
- -2.1A Continuous drain current
- -10A Pulsed drain current
애플리케이션
Industrial, Power Management
경고
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
기술 사양
Transistor Polarity
P Channel
Drain Source Voltage Vds
80V
Drain Source Voltage Vds P Channel
80V
On Resistance Rds(on)
0.148ohm
Continuous Drain Current Id P Channel
2.1A
Drain Source On State Resistance N Channel
0.148ohm
Drain Source On State Resistance P Channel
0.148ohm
Transistor Case Style
SOIC
No. of Pins
8Pins
Power Dissipation P Channel
3.1W
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (17-Jan-2022)
Channel Type
P Channel
Drain Source Voltage Vds N Channel
80V
Continuous Drain Current Id
2.1A
Continuous Drain Current Id N Channel
2.1A
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
1.8V
Power Dissipation Pd
3.1W
Power Dissipation N Channel
3.1W
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
법률 및 환경
원산지:
최종후의 중요 제조 공정이 이루어진 국가원산지:United States
최종후의 중요 제조 공정이 이루어진 국가
최종후의 중요 제조 공정이 이루어진 국가원산지:United States
최종후의 중요 제조 공정이 이루어진 국가
관세 번호:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS 준수:예
RoHS
RoHS 프탈레이트 준수:예
RoHS
SVHC:No SVHC (17-Jan-2022)
제품 준수 증명서 다운로드
제품 준수 증명서
무게(kg):.000117