페이지 인쇄
이미지는 참고용으로만 제공됩니다. 자세한 내용은 제품 설명을 참조하세요.
제품 정보
제조업체ONSEMI
제조업체 부품 번호FDT3612
주문 코드1700642
기술 데이터 시트
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id3.7A
Drain Source On State Resistance0.12ohm
Transistor Case StyleSOT-223
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.5V
Power Dissipation3W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCLead (27-Jun-2024)
제품 개요
The FDT3612 is a N-channel MOSFET designed specifically to improve the overall efficiency of DC-to-DC converters using either synchronous or conventional switching PWM controllers. It features faster switching and lower gate charge than other MOSFETs with comparable RDS (ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies) and DC-to-DC power supply designs with higher overall efficiency.
- Fast switching speed
- High performance Trench technology for extremely low RDS (ON)
- High power and current handling capability in a widely used surface-mount package
- 14nC Typical low gate charge
애플리케이션
Power Management, Motor Drive & Control
경고
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
기술 사양
Channel Type
N Channel
Continuous Drain Current Id
3.7A
Transistor Case Style
SOT-223
Rds(on) Test Voltage
10V
Power Dissipation
3W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.12ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.5V
No. of Pins
3Pins
Product Range
-
SVHC
Lead (27-Jun-2024)
법률 및 환경
원산지:
최종후의 중요 제조 공정이 이루어진 국가원산지:Philippines
최종후의 중요 제조 공정이 이루어진 국가
최종후의 중요 제조 공정이 이루어진 국가원산지:Philippines
최종후의 중요 제조 공정이 이루어진 국가
관세 번호:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS 준수:Y-Ex
RoHS
RoHS 프탈레이트 준수:예
RoHS
SVHC:Lead (27-Jun-2024)
제품 준수 증명서 다운로드
제품 준수 증명서
무게(kg):.00044