페이지 인쇄
FFSB10120A-F085
Silicon Carbide Schottky Diode, EliteSiC, EliteSiC Series, Single, 1.2 kV, 10 A, 62 nC
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제품 정보
제조업체ONSEMI
제조업체 부품 번호FFSB10120A-F085
주문 코드2981081RL
Product RangeEliteSiC Series
기술 데이터 시트
Product RangeEliteSiC Series
Diode ConfigurationSingle
Repetitive Peak Reverse Voltage1.2kV
Average Forward Current10A
Total Capacitive Charge62nC
Diode Case StyleTO-263 (D2PAK)
No. of Pins3 Pin
Operating Temperature Max175°C
Diode MountingSurface Mount
QualificationAEC-Q101
SVHCLead (27-Jun-2024)
제품 개요
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
- Max Junction Temperature 175°C
- AEC−Q101 qualified
- Avalanche Rated 200 mJ
- No Reverse Recovery/No Forward Recovery
- Ease of Paralleling
- High Surge Current Capacity
- Positive Temperature Coefficient
경고
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
기술 사양
Product Range
EliteSiC Series
Repetitive Peak Reverse Voltage
1.2kV
Total Capacitive Charge
62nC
No. of Pins
3 Pin
Diode Mounting
Surface Mount
SVHC
Lead (27-Jun-2024)
Diode Configuration
Single
Average Forward Current
10A
Diode Case Style
TO-263 (D2PAK)
Operating Temperature Max
175°C
Qualification
AEC-Q101
기술 문서 (1)
법률 및 환경
원산지:
최종후의 중요 제조 공정이 이루어진 국가원산지:China
최종후의 중요 제조 공정이 이루어진 국가
최종후의 중요 제조 공정이 이루어진 국가원산지:China
최종후의 중요 제조 공정이 이루어진 국가
관세 번호:85411000
US ECCN:EAR99
EU ECCN:NLR
RoHS 준수:Y-Ex
RoHS
RoHS 프탈레이트 준수:예
RoHS
SVHC:Lead (27-Jun-2024)
제품 준수 증명서 다운로드
제품 준수 증명서
무게(kg):.0004