HIP2101IBZT

HIP2101IBZT is a high frequency, 100V half-bridge N-channel power MOSFET driver IC. It is equivalent to the HIP2100 with the added advantage of full TTL/CMOS-compatible logic input pins. The low-side and high-side gate drivers are independently controlled and matched to 13ns. This gives users total control over dead time for specific power circuit topologies. Undervoltage protection on both the low-side and high-side supplies forces the outputs low. An on-chip diode eliminates the discrete diode required with other driver ICs. A new level-shifter topology yields the low-power benefits of pulsed operation with the safety of DC operation. Unlike some competitors, the high-side output returns to its correct state after a momentary undervoltage of the high-side supply. Applications include telecom half bridge power supplies, avionics DC-DC converters, two-switch forward converter, active clamp forward converters.

• Bootstrap supply max voltage to 114VDC, on-chip 1 ohm bootstrap diode
• Fast propagation times for Multi-MHz circuits, no start-up problems
• TTL/CMOS input thresholds increase flexibility, low power consumption
• Independent inputs for non-half bridge topologies, supply undervoltage protection
• Outputs unaffected by supply glitches, HS ringing below ground, or HS slewing at high dv/dt
• 3 ohm output driver resistance, 0.3mA typ VDD quiescent current
• 1.7mA typ VDD operating current at (f = 500KHz)
• Lower turn-off propagation delay (LI falling to LO falling) is 25ns typ at (TJ = 25°C)
• Temperature range from -40°C to +125°C
• 8-lead SOIC package

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