2N3866

2N3866 is a NPN silicon transitory. It is designed for amplifier, frequency multiplier or oscillator applications in military and industrial equipment. It is suitable for output, driver or pre driver stages in VHF and UHF equipment.

• Collector emitter breakdown voltage is 55VDC min (TA = 25°C, IC = 5mAdc, RBE = 10 ohm)
• Emitter base breakdown voltage is 3.5VDC min (IE = 0.1mADC, IC = 0, TA = 25°C)
• Collector cutoff current is 20µA max (VCE = 28VDC, IB = 0, TA = 25°C)
• DC current gain range from 10 to 200 (IC = 0.05ADC, VDC = 5VDC, TA = 25°C)
• Collector emitter saturation voltage is 1VDC max (IC = 100mADC, IB = 20mADC, TA = 25°C)
• Current gain bandwidth product is 800MHz typ (IC = 50mADC, VCE = 15VDC, f = 200MHz, TA = 25°C)
• Power gain is 10dB min (pin = 0.1W, VCE = 28VDC, F = 400MHz, TA = 25°C)
• Power output is 1W min (pin = 0.1W, VCE = 28VDC, F = 400MHz, TA = 25°C)
• Collector efficiency is 45% min (pin = 0.1W, VCE = 28VDC, F = 400MHz, TA = 25°C)
• Operating temperature range from -65 to 200°C