제품 정보
제품 개요
L6386ADTR is a high voltage high and low-side driver. It is manufactured with the BCD™ offline technology, and able to drive one high and one low-side power MOSFET or IGBT device. The high-side (floating) section is able to work with voltage rail up to 600V. Both device outputs can independently sink and source 650mA and 400mA respectively and can be simultaneously driven for high half-bridge configurations. This driver is ideal for applications such as home appliances, induction heating, motor drivers, SR motors, DC, AC, PMDC and PMAC motors, asymmetrical half-bridge topologies, HVAC, lighting applications, factory automation, power supply system etc.
- dV/dt immunity to ±50V/nsec in full temperature range
- Switching times 50/30nsec, rise/fall with 1nF load
- CMOS/TTL Schmitt trigger inputs with hysteresis and pull-down
- Undervoltage lockout on lower and upper driving section
- Integrated bootstrap diode, case style is SO-14
- Outputs in phase with inputs
- Junction operating temperature range is -45°C to 125°C
- Driver current capability is 400mA source and 650mA for sink
기술 사양
2Channels
High Side and Low Side
14Pins
SOIC
Inverting
650mA
17V
125°C
110ns
-
-
IGBT, MOSFET
SOIC
Surface Mount
400mA
-
-45°C
110ns
-
No SVHC (21-Jan-2025)
법률 및 환경
최종후의 중요 제조 공정이 이루어진 국가원산지:China
최종후의 중요 제조 공정이 이루어진 국가
RoHS
RoHS
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