TPS43060RTET

The TPS43060RTET is a Low IQ Synchronous Boost Controller with wide input voltage and 7.5V gate drive for standard FETs. Synchronous rectification enables high-efficiency for high-current applications and lossless inductor DCR sensing further improves efficiency. The resulting low-power losses supports high power-density and high-reliability boost converter solutions over extended (-40°C to 150°C) temperature range. The TPS43060 includes a 7.5V gate drive supply, which is suitable to drive a broad range of MOSFETs. It has a 5.5V gate drive supply and driver strength optimized for low Qg NexFET power MOSFETs. Also, TPS43061 provides an integrated bootstrap diode for the high-side gate driver to reduce the external parts count. The PWM control circuitry turns on the low-side MOSFET at the beginning of each oscillator clock cycle, as the error amplifier compares the output voltage feedback signal at the FB pin to the internal 1.22V reference voltage.

• 58V Maximum output voltage
• 7.5V Gate drive optimized for standard threshold MOSFETs
• Current-mode control with internal slope compensation
• Adjustable frequency from 50kHz to 1MHz
• Synchronization capability to external clock
• Adjustable soft-start time
• Inductor DCR or resistor current sensing
• Output voltage power-good indicator
• ±0.8% Feedback reference voltage
• 5µA Shutdown supply current
• 600µA Operating quiescent current
• Cycle-by-cycle current limit and thermal shutdown
• Adjustable under-voltage lockout (UVLO) and output overvoltage protection
• Green product and no Sb/Br

애플리케이션

Computers & Computer Peripherals, Automotive, Power Management, RF Communications, Portable Devices

경고

This device has limited built-in ESD protection, leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

메모

This device has limited built-in ESD protection, leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.