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수량 | 가격 |
---|---|
1+ | ₩80,301 |
5+ | ₩70,187 |
10+ | ₩60,073 |
50+ | ₩58,872 |
제품 정보
제품 개요
UF3SC120016K3S is a SiC FET device based on a unique ‘cascade’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFETs or Si super junction devices. Available in the TO-247-3L package, this device exhibits ultralow gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads when used with recommended RC-snubbers, and any application requiring standard gate drive. Typical applications are EV charging, PV inverters, switch mode power supplies, power factor correction modules, motor drives, induction heating.
- Typical on-resistance RDS(on) is 16mohm (VGS=12V, ID=50A, TJ=25°C)
- Maximum operating temperature of 175°C
- Excellent reverse recovery, low gate charge
- Low intrinsic capacitance, ESD protected, HBM class 2
- Very low switching losses (required RC-snubber loss negligible under typical operating conditions)
- Drain-source voltage is 1200V
- Continuous drain current is 107A at TC = 25°C
- Operating and storage temperature range from -55 to 175°C
- Pulsed drain current is 350A at TC = 25°C
- Power dissipation is 517W at TC = 25°C
기술 사양
Single
107A
0.016ohm
3Pins
4.7V
175°C
No SVHC (17-Jan-2023)
N Channel
1.2kV
TO-247
12V
517W
-
법률 및 환경
최종후의 중요 제조 공정이 이루어진 국가원산지:Philippines
최종후의 중요 제조 공정이 이루어진 국가
RoHS
RoHS
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