페이지 인쇄
SI1029X-T1-GE3
Dual MOSFET, Complementary N and P Channel, 60 V, 60 V, 305 mA, 305 mA, 1.4 ohm
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제품 정보
제조업체VISHAY
제조업체 부품 번호SI1029X-T1-GE3
주문 코드2101477RL
기술 데이터 시트
Transistor PolarityComplementary N and P Channel
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds N Channel60V
Drain Source Voltage Vds60V
Continuous Drain Current Id305mA
Drain Source Voltage Vds P Channel60V
On Resistance Rds(on)1.4ohm
Continuous Drain Current Id N Channel305mA
Continuous Drain Current Id P Channel305mA
Drain Source On State Resistance N Channel1.4ohm
Transistor MountingSurface Mount
Drain Source On State Resistance P Channel1.4ohm
Rds(on) Test Voltage10V
Transistor Case StyleSC-89
Gate Source Threshold Voltage Max2.5V
Power Dissipation Pd250mW
No. of Pins6Pins
Power Dissipation N Channel250mW
Power Dissipation P Channel250mW
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
제품 개요
The SI1029X-T1-GE3 is a N/P-channel complementary MOSFET designed for use with replace digital transistor, level-shifter, battery operated systems and power supply converter circuits applications. It offers ease in driving switches, low offset (error) voltage, low-voltage operation and high-speed circuits.
- Halogen-free
- TrenchFET® power MOSFET
- Very small footprint
- High-side switching
- Low ON-resistance
- ±2V Low threshold
- 15ns Fast switching speed
애플리케이션
Industrial, Power Management
기술 사양
Transistor Polarity
Complementary N and P Channel
Drain Source Voltage Vds N Channel
60V
Continuous Drain Current Id
305mA
On Resistance Rds(on)
1.4ohm
Continuous Drain Current Id P Channel
305mA
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
2.5V
No. of Pins
6Pins
Power Dissipation P Channel
250mW
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (21-Jan-2025)
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds
60V
Drain Source Voltage Vds P Channel
60V
Continuous Drain Current Id N Channel
305mA
Drain Source On State Resistance N Channel
1.4ohm
Drain Source On State Resistance P Channel
1.4ohm
Transistor Case Style
SC-89
Power Dissipation Pd
250mW
Power Dissipation N Channel
250mW
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
법률 및 환경
원산지:
최종후의 중요 제조 공정이 이루어진 국가원산지:United States
최종후의 중요 제조 공정이 이루어진 국가
최종후의 중요 제조 공정이 이루어진 국가원산지:United States
최종후의 중요 제조 공정이 이루어진 국가
관세 번호:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS 준수:예
RoHS
RoHS 프탈레이트 준수:예
RoHS
SVHC:No SVHC (21-Jan-2025)
제품 준수 증명서 다운로드
제품 준수 증명서
무게(kg):.000031