페이지 인쇄
SIA975DJ-T1-GE3
Dual MOSFET, P Channel, 12 V, 12 V, 4.5 A, 4.5 A, 0.07 ohm
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제품 정보
제조업체VISHAY
제조업체 부품 번호SIA975DJ-T1-GE3
주문 코드2335392RL
기술 데이터 시트
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds12V
Drain Source Voltage Vds N Channel12V
Continuous Drain Current Id4.5A
Drain Source Voltage Vds P Channel12V
Continuous Drain Current Id N Channel4.5A
On Resistance Rds(on)0.07ohm
Continuous Drain Current Id P Channel4.5A
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.07ohm
Rds(on) Test Voltage1.8V
Drain Source On State Resistance P Channel0.07ohm
Gate Source Threshold Voltage Max400mV
Transistor Case StylePowerPAK SC-70
Power Dissipation Pd7.8W
No. of Pins6Pins
Power Dissipation N Channel7.8W
Power Dissipation P Channel7.8W
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
SVHCNo SVHC (21-Jan-2025)
제품 개요
SiA975DJ-T1-GE3 is a dual P-channel 12V (D-S) MOSFET. The applications include a load switch, PA switch, and battery switch for portable devices and game consoles.
- TrenchFET® power MOSFET, 100 % Rg tested
- New thermally enhanced PowerPAK® SC-70 package, small footprint area, low on-resistance
- Drain-source breakdown voltage is -12V min (VGS = 0V, ID = -250μA, TJ = 25°C)
- Gate-source threshold voltage range from -0.4 to -1V (VDS = VGS, ID = -250μA, TJ = 25°C)
- Continuous drain current is -4.5A (TJ = 150°C, TC = 25°C)
- Pulsed drain current is -15A (TA = 25°C)
- Continuous source-drain diode current is -4.5A max (TC = 25°C)
- Maximum power dissipation is 7.8W (TC = 25°C)
- Input capacitance is 1500pF typ (VDS = -6V, VGS = 0V, f = 1MHz, TC = 25°C)
- PowerPAK SC-70 package, operating junction temperature range from -55 to +150°C
경고
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
기술 사양
Channel Type
P Channel
Drain Source Voltage Vds
12V
Continuous Drain Current Id
4.5A
Continuous Drain Current Id N Channel
4.5A
Continuous Drain Current Id P Channel
4.5A
Drain Source On State Resistance N Channel
0.07ohm
Drain Source On State Resistance P Channel
0.07ohm
Transistor Case Style
PowerPAK SC-70
No. of Pins
6Pins
Power Dissipation P Channel
7.8W
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (21-Jan-2025)
Transistor Polarity
P Channel
Drain Source Voltage Vds N Channel
12V
Drain Source Voltage Vds P Channel
12V
On Resistance Rds(on)
0.07ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
1.8V
Gate Source Threshold Voltage Max
400mV
Power Dissipation Pd
7.8W
Power Dissipation N Channel
7.8W
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
법률 및 환경
원산지:
최종후의 중요 제조 공정이 이루어진 국가원산지:Germany
최종후의 중요 제조 공정이 이루어진 국가
최종후의 중요 제조 공정이 이루어진 국가원산지:Germany
최종후의 중요 제조 공정이 이루어진 국가
관세 번호:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS 준수:예
RoHS
RoHS 프탈레이트 준수:예
RoHS
SVHC:No SVHC (21-Jan-2025)
제품 준수 증명서 다운로드
제품 준수 증명서
무게(kg):.001