VS-C20ET07T-M3

VS-C20ET07T-M3 is a SiC merged PIN Schottky diode. It is designed for high performance and ruggedness. Optimum choice for high-speed hard switching and efficient operation over a wide temperature range, it is also recommended for all applications suffering from Silicon ultrafast recovery behaviour. Typical applications include AC/DC PFC and DC/DC ultra high-frequency output rectification in FBPS and LLC converters.

• Majority carrier diode using schottky technology on SiC wide band gap material
• Positive VF temperature coefficient for easy paralleling
• Virtually no recovery tail and no switching losses
• Temperature invariant switching behaviour
• MPS structure for high ruggedness to forward current surge events
• Meets JESD 201 class 1A whisker test
• Solder bath temperature 275°C maximum, 10s per JESD 22-B106
• Peak repetitive reverse voltage is 650V (TA = 25°C)
• Single circuit configuration
• 2L TO-220AC package, operating junction and storage temperature range from -55 to +175°C

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