입고 시 알림 요청
수량 | 가격 |
---|---|
1+ | ₩42,837 |
5+ | ₩40,356 |
10+ | ₩37,875 |
50+ | ₩35,394 |
100+ | ₩32,968 |
제품 정보
제품 개요
The C2M0080120D from Cree is a 2nd generation Z-FET, through hole N channel silicon carbide power MOSFET in TO-247 package. This MOSFET features C2M SiC MOSFET technology, high blocking voltage with low On resistance, high speed switching with low capacitances, easy to parallel and simple to drive, avalanche ruggedness, resistant to latch up, higher system efficiency, reduced cooling requirements and increased power density. Applications include solar inverters, switch mode power supplies, high voltage DC-DC converters and battery chargers.
- Drain to source voltage (Vds) of 1.2kV
- Continuous drain current of 36A
- Power dissipation of 192W
- Operating junction temperature of -55°C to 150°C
- Low on state resistance of 80mohm at Vgs of 20V
애플리케이션
Power Management, Consumer Electronics, Portable Devices, Industrial, Motor Drive & Control, Alternative Energy
기술 사양
Single
31.6A
0.08ohm
3Pins
3.2V
150°C
-
N Channel
1.2kV
TO-247
20V
208W
-
No SVHC (17-Dec-2014)
C2M0080120D의 대체 제품
1개 제품을 찾았습니다.
관련 제품
2개 제품을 찾았습니다.
법률 및 환경
최종후의 중요 제조 공정이 이루어진 국가원산지:Philippines
최종후의 중요 제조 공정이 이루어진 국가
RoHS
RoHS
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