페이지 인쇄
BSS8402DW-7-F
Dual MOSFET, Complementary N and P Channel, 60 V, 60 V, 115 mA, 130 mA, 13.5 ohm
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제품 정보
제조업체DIODES INC.
제조업체 부품 번호BSS8402DW-7-F
주문 코드1713834RL
기술 데이터 시트
Transistor PolarityComplementary N and P Channel
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds60V
Drain Source Voltage Vds N Channel60V
Continuous Drain Current Id115mA
Drain Source Voltage Vds P Channel60V
On Resistance Rds(on)13.5ohm
Continuous Drain Current Id N Channel115mA
Continuous Drain Current Id P Channel130mA
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel13.5ohm
Rds(on) Test Voltage10V
Drain Source On State Resistance P Channel10ohm
Transistor Case StyleSOT-363
Gate Source Threshold Voltage Max2.5V
No. of Pins6Pins
Power Dissipation Pd200mW
Power Dissipation N Channel200mW
Power Dissipation P Channel200mW
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCNo SVHC (27-Jun-2024)
제품 개요
BSS8402DW-7-F is a complementary pair enhancement mode MOSFET. This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and maintains superior switching performance, making it ideal for high efficiency power management applications. Typical applications include general purpose interfacing switch, power management functions, analogue switch.
- Low on-resistance, low gate threshold voltage
- Low input capacitance, fast switching speed
- Low input/output leakage, complementary pair
- Drain source voltage is 60V at TA = +25°C, P/N channel
- Continuous drain current is 115mA at TA = +25°C, P/N channel
- Drain source on state resistance is 13.5ohm at TA = +25°C, P/N channel
- Power dissipation is 200mW at TA = +25°C, P/N channel
- SOT363 case
- Operating and storage temperature range from -55 to +150°C
기술 사양
Transistor Polarity
Complementary N and P Channel
Drain Source Voltage Vds
60V
Continuous Drain Current Id
115mA
On Resistance Rds(on)
13.5ohm
Continuous Drain Current Id P Channel
130mA
Drain Source On State Resistance N Channel
13.5ohm
Drain Source On State Resistance P Channel
10ohm
Gate Source Threshold Voltage Max
2.5V
Power Dissipation Pd
200mW
Power Dissipation P Channel
200mW
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (27-Jun-2024)
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds N Channel
60V
Drain Source Voltage Vds P Channel
60V
Continuous Drain Current Id N Channel
115mA
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Transistor Case Style
SOT-363
No. of Pins
6Pins
Power Dissipation N Channel
200mW
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
BSS8402DW-7-F의 대체 제품
1개 제품을 찾았습니다.
법률 및 환경
원산지:
최종후의 중요 제조 공정이 이루어진 국가원산지:China
최종후의 중요 제조 공정이 이루어진 국가
최종후의 중요 제조 공정이 이루어진 국가원산지:China
최종후의 중요 제조 공정이 이루어진 국가
관세 번호:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS 준수:예
RoHS
RoHS 프탈레이트 준수:예
RoHS
SVHC:No SVHC (27-Jun-2024)
제품 준수 증명서 다운로드
제품 준수 증명서
무게(kg):.000006