BSH103,215

The BSH103 from NXP is a surface mount, N channel enhancement mode MOS transistor in SOT-23 package using TrenchMOS technology. This transistor features very low threshold, high speed switching, no secondary breakdown and direct interface to CMOS, TTL. BSH103 is designed and qualified for use in high frequency applications, glue logic interface between logic blocks or periphery, computing, battery powered applications.

• Suitable for use with all 5V logic families
• Suitable for very low gate drive sources
• Drain to source voltage (Vds) of 30V
• Gate to source voltage of ±8V
• Drain current (Id) of 850mA
• Power dissipation (Pd) of 750mW
• Operating junction temperature range from -55°C to 150°C

애플리케이션

Power Management, Consumer Electronics, Portable Devices, Industrial