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NVMFD5C680NLT1G
Dual MOSFET, N Channel, 60 V, 60 V, 26 A, 26 A, 0.023 ohm
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제품 정보
제조업체ONSEMI
제조업체 부품 번호NVMFD5C680NLT1G
주문 코드2835612RL
기술 데이터 시트
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds60V
Drain Source Voltage Vds N Channel60V
Continuous Drain Current Id26A
Drain Source Voltage Vds P Channel60V
Continuous Drain Current Id N Channel26A
On Resistance Rds(on)0.023ohm
Continuous Drain Current Id P Channel26A
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.023ohm
Rds(on) Test Voltage10V
Drain Source On State Resistance P Channel0.023ohm
Transistor Case StyleDFN
Gate Source Threshold Voltage Max2.2V
No. of Pins8Pins
Power Dissipation Pd19W
Power Dissipation N Channel19W
Power Dissipation P Channel19W
Operating Temperature Max175°C
Product Range-
Qualification-
Automotive Qualification StandardAEC-Q101
MSLMSL 1 - Unlimited
SVHCLead (27-Jun-2024)
제품 개요
NVMFD5C680NLT1G is a dual N-channel power MOSFET. It has low RDS(on) to minimize conduction losses and low QG and capacitance to minimize driver losses.
- AEC-Q101 qualified and PPAP capable
- Drain-to-source breakdown voltage is 60V minimum at (VGS = 0V, ID = 250µA)
- Gate-to-source leakage current is 100nA maximum at (VDS = 0V, VGS = 20V)
- Negative threshold temperature coefficient is -4.3mV/°C typical at (TJ = 25°C)
- Drain-to-source on resistance is 23mohm typical at (VGS = 10V, ID = 5A)
- Input capacitance is 350pF typical at (VGS = 0V, f = 1MHz, VDS = 25V)
- Gate-to-drain charge is 0.8nC typical at (VGS = 4.5V, VDS = 48V; ID = 10A)
- Turn-on delay time is 6.4ns typical at (VGS = 4.5V, VDS = 48V, ID = 10A, RG = 1ohm)
- Rise time is 25ns typical at (VGS = 4.5V, VDS = 48V, ID = 10A, RG = 1ohm)
- Junction temperature range from -55°C to +175°C, DFN8 package
기술 사양
Transistor Polarity
N Channel
Drain Source Voltage Vds
60V
Continuous Drain Current Id
26A
Continuous Drain Current Id N Channel
26A
Continuous Drain Current Id P Channel
26A
Drain Source On State Resistance N Channel
0.023ohm
Drain Source On State Resistance P Channel
0.023ohm
Gate Source Threshold Voltage Max
2.2V
Power Dissipation Pd
19W
Power Dissipation P Channel
19W
Product Range
-
Automotive Qualification Standard
AEC-Q101
SVHC
Lead (27-Jun-2024)
Channel Type
N Channel
Drain Source Voltage Vds N Channel
60V
Drain Source Voltage Vds P Channel
60V
On Resistance Rds(on)
0.023ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Transistor Case Style
DFN
No. of Pins
8Pins
Power Dissipation N Channel
19W
Operating Temperature Max
175°C
Qualification
-
MSL
MSL 1 - Unlimited
법률 및 환경
원산지:
최종후의 중요 제조 공정이 이루어진 국가원산지:Malaysia
최종후의 중요 제조 공정이 이루어진 국가
최종후의 중요 제조 공정이 이루어진 국가원산지:Malaysia
최종후의 중요 제조 공정이 이루어진 국가
관세 번호:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS 준수:Y-Ex
RoHS
RoHS 프탈레이트 준수:예
RoHS
SVHC:Lead (27-Jun-2024)
제품 준수 증명서 다운로드
제품 준수 증명서
무게(kg):.000012